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AP9408GJ Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement | |||
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Advanced Power
Electronics Corp.
AP9408GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Lower Gate Charge
â¼ Simple Drive Requirement
â¼ Fast Switching Characteristic
D
BVDSS
30V
RDS(ON)
10mΩ
G
ID
57A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
â¡
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9408GJ) are
available for low-profile applications.
G
D
S
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
57
41
228
53.6
0.36
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/â
â
â
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.8
62.5
110
Units
â/W
â/W
â/W
1
200903055
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