AP90T10GP-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP90T10GP-HF
12
I _D =40A
V _DS =80V
10
8
6
4
2
0
0
50
100
150
200
250
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
16000
12000
C _iss
8000
4000
C _oss
C _rss
0
1
5
9
13
17
21
25
29
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
Operation in this area
limited by RDS(ON)
100
100us
1ms
10
10ms
T _C =25 ^o C
Single Pulse
100ms
DC
1
0.1
1
10
100
1000
V _DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
160
Limited by package
120
80
V_G
10V
Q_GS
Q_G
Q_GD
40
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Charge
Q
Fig 12. Gate Charge Waveform
4