AP90T10GP-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

300
T _C =25 ^o C
250
200
150
100
10V
8.0V
7.0V
6.0V
V _G = 5.0V
50
0
0
4
8
12
16
20
24
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
15
I _D = 40A
T _C = 25 ^o C
13
11
9
7
5
3
4
5
6
7
8
9
10
V _GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T _j =150 ^o C
T _j =25 ^o C
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP90T10GP-HF
200
T _C =150 ^o C
10V
8.0V
160
7.0V
6.0V
V _G =5.0V
120
80
40
0
0
4
8
12
16
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I _D =40A
V _G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D =250uA
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3