AP86T02GH Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP86T02GH/J
16
I _D =30A
12
V _DS =10V
V _DS =15V
8
V _DS =20V
4
0
0
10
20
30
40
50
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
1ms
10
T _c =25 ^o C
Single Pulse
10ms
100ms
1s
DC
1
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
120
V _DS =5V
80
T _j =25 ^o C
T _j =175 ^o C
40
0
0
2
4
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
10000
C _iss
1000
C _oss
C _rss
100
1
5
9
13
17
21
25
29
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
40
2.8V 3V ^3.2V
30
3.5V
3.8V
20
4.2V
10
4.5V
10V
0
0
20
40
60
80
100
I _D (A)
Fig 12. Drain-Source On Resistance
4