AP86T02GH Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

200
10V
T _C =25 ^o C
7.0V
5.0V
150
4.5V
100
50
V _G =3.0V
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
16
I _D =30A
T _c =25 ℃
12
8
4
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
20
T _j =175 ^o C
10
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP86T02GH/J
120
10V
T _C = 175 ^o C
7.0V
5.0V
90
4.5V
60
V _G = 3 .0V
30
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =45A
V _G =10V
1.4
1.0
0.6
25
50
75
100
125
150
175
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
0.8
0.4
0.0
25
50
75
100
125
150
175
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3