AP80T12GP-HF_14 Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP80T12GP-HF
12
I _D = 40 A
10
8
V _DS =60V
V _DS =72V
V _DS =96V
6
4
2
0
0
40
80
120
160
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
Operation in this
area limited by
100
RDS(ON)
100us
1ms
10
10ms
T _c =25 ^o C
Single Pulse
1
0.1
1
10
100ms
DC
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
300
V _DS =5V
200
100
T _j =150 ^o C
T _j =25 ^o C
0
1
2
3
4
5
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
10000
8000
C _iss
6000
4000
2000
0
1
C _oss
C _rss
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
100
80
60
40
20
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 12. Maximum Continuous Drain
Current v.s. Case Temperature
4