AP80T12GP-HF_14 Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

300
T _C = 25 ^o C
10V
8.0V
250
7.0V
6.0V
200
V _GS =5.0V
150
100
50
0
0
4
8
12
16
20
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
18
I _D =40A
16
T _C =25 ^o C
14
12
10
8
6
2
3
4
5
6
7
8
9
10
V _GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T _j =150 ^o C
20
T _j =25 ^o C
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP80T12GP-HF
200
T _C = 150 ^o C
10V
8.0V
160
7.0V
6.0V
V _GS =5.0V
120
80
40
0
0
4
8
12
16
20
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I _D =40A
2.4 ^{V G =10V}
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D =250uA
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3