AP6P250N Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP6P250N
10
I _D = -1 A
V _DS = -48V
8
6
4
2
0
0
2
4
6
8
10
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
800
600
C _iss
400
200
C _oss
0
C _rss
0
20
40
60
80
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
Operation in this
area limited by
RDS(ON)
1
0.1
100us
1ms
10ms
100ms
0.01
T _A =25 ^o C
1s
DC
Single Pulse
0.001
0.01
0.1
1
10
100
1000
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
.
0.02
0.01
Single Pulse
0.01
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 300℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
8
V _DS =-5V
6
4
2
T _j =150 ^o C
T _j =25 ^o C
0
0
1
2
3
4
5
6
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
2
1.6
1.2
0.8
0.4
0
25
50
75
100
125
150
T _A , Ambient Temperature ( ^o C )
Fig 12. Drain Current v.s. Ambient
Temperature
4