AP6P250N Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP6P250N
10
T _A =25 ^o C
-10V
-8.0V
8
-7.0V
-6.0V
-5.0V
6
-4.5V
V _G = -4.0V
4
2
0
0
1
2
3
4
5
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T _A =150 ^o C
-10V
-8.0V
8
-7.0V
-6.0V
-5.0V
6
-4.5V
V _G = -4.0V
4
2
0
0
2
4
6
8
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
200
I _D = -1A
190
T _A =25 ^o C
180
170
.
160
150
140
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
T _j =150 ^o C
T _j =25 ^o C
6
2.8
I _D = -1.6 A
V _G = - 10V
2.4
2.0
1.6
1.2
0.8
0.4
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D = -1mA
1.6
1.2
4
0.8
2
0.4
0
0
0.2
0.4
0.6
-^0.8
1
1.2
1.4
1.6
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.0
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3