AP6910GSM-HF_14 Datasheet, PDF (4/7 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP6910GSM-HF
Channel-1
50
T _A =25 ^o C
40
30
10V
7.0V
6.0V
5.0V
V _G =4.0V
20
10
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
I_D=6A
T _A =25 ^o C
18
16
14
12
2
4
6
8
10
V _GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T _j =150 ^o C
4
T _j =25 ^o C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
50
T _A =150 ^o C
10V
7.0V
40
6.0V
5.0V
30
V _G =4.0V
20
10
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I_D=9A
V _G =10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.5
1
0.5
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4