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AP6910GSM-HF_14 Datasheet, PDF (2/7 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
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AP6910GSM-HF
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=9A
VGS=4.5V, ID=6A
VDS=VGS, ID=250uA
VDS=5V, ID=9A
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
ID=9A
VDS=15V
VGS=4.5V
VDS=15V
ID=9A
RG=3Ω,VGS=10V
RD=1.7Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
30 -
-
V
-
- 15.8 mΩ
-
- 23 mΩ
1
-
3
V
- 16 -
S
-
-
1 uA
-
- +100 nA
-
6 9.6 nC
- 1.4 - nC
- 3.4 - nC
-
6
- ns
- 30 - ns
- 16 - ns
-
5
- ns
- 400 640 pF
- 135 - pF
- 80 - pF
- 3.5 5.3 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=1A, VGS=0V
IS=9A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
-
-
1V
- 20 - ns
- 13 - nC
2
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