AP6681GMT-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Low On-resistance, SO-8 Compatible

AP6681GMT-HF
8
I _D = -20 A
V _DS = -15V
6
f=1.0MHz
16000
12000
C _iss
4
8000
2
0
0
40
80
120
160
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
Operation in this area
100
limited by RDS(ON)
100us
1ms
10
10ms
100ms
T _C =25 ^o C
DC
Single Pulse
1
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
100
V _DS = -5V
80
60
40
T _j =150 ^o C
20
T _j =25 ^o C
T _j =-40 ^o C
0
0
1
2
3
4
5
6
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4000
C _oss
C _rss
0
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
160
120
80
40
2.01E+09
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4