AP6681GMT-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Low On-resistance, SO-8 Compatible

200
T _C =25 ^o C
-10V
-7.0V
160
-6.0V
-5.0V
V _G = -4.0V
120
80
40
0
0
1
2
3
4
5
6
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5
I _D = -20 A
T _C =25 ℃
4
3
2
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
20
T _j =150 ^o C
T _j =25 ^o C
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP6681GMT-HF
200
T _C = 150 ^o C
-10V
-7.0V
160
-6.0V
-5.0V
V _G = -4.0V
120
80
40
0
0
2
4
6
8
10
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D = -20A
V _G = -10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D = -250uA
1.6
1.2
0.8
0.4
2.01E+09
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3