AP65SL099AWL Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP65SL099AWL
12
I _D =12.8A
10 ^{V DS =480V}
8
6
4
2
0
0
30
60
90
120
150
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
100000
10000
C _iss
0.37Ω
1000
100
C _oss
C _rss
10
1
0
100
200
300
400
500
600
700
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
100
Operation in this area
limited by RDS(ON)
10
10us
100us
.
1
T _C =25 ^o C
Single Pulse
1ms
10ms
100ms
DC
0.1
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
50
V _DS =5V
25
T _j =150 ^o C
T _j =25 ^o C
0
0
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
V_G
10V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4