AP65SL099AWL Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP65SL099AWL
80
T _C =25 ^o C
60
40
20
10V
9.0V
8.0V
7.0V
V _G =6.0V
40
T _C =150 ^o C
30
20
10
10V
9.0V
8.0V
7.0V
0.37Ω ^{V G =6.0V}
0
0
4
8
12
16
20
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
I _D =12.8A
T _C =25 ^o C
95
0
0
3
6
9
12
15
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
4
I _D =12.8A
V _G =10V
3
90
.
2
85
1
80
4
7
10
V _GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
16
12
0
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I _D =250uA
1.5
8
1
T _j = 150 ^o C
T _j = 25 ^o C
4
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3