AP4961GM Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – Lower On-resistance, Simple Drive Requirement

AP4961GM
6
I _D =-7A
V _DS =-10V
5
4
3
2
1
0
0
10
20
30
40
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10 _{Operation in this area}
limited by RDS(ON)
100us
1ms
1
10ms
100ms
0.1
1s
T _A =25 ^o C
Single Pulse
DC
0.01
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
20
V _DS =-5V
16
T _j =25 ^o C
T _j =150 ^o C
12
8
4
0
0
0.4
0.8
1.2
1.6
2
2.4
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
3200
2400
C _iss
1600
800
C _oss
C _rss
0
1
5
9
13
17
21
25
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.1
0.01
0.001
0.0001
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135^oC/W
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4