AP4961GM Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Lower On-resistance, Simple Drive Requirement

20
-5.0V
T _A = 25 ^o C
-4.5V
16
-3.5V
-2.5V
V _G = -1.8V
12
8
4
0
0
0
1
1
2
2
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
34
I _D = -2 A
T _A =25 ^o C
30
26
22
18
14
0
2
4
6
8
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T _j =150 ^o C
4
T _j =25 ^o C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP4961GM
20
-5.0V
16
T _A = 150 ^o C
-4.5V
-3.5V
-2.5V
V _G = -1.8V
12
8
4
0
0
1
2
3
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D =-7A
V _G =-4.5V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3