AP4957AGM Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Low On-Resistance, Simple Drive Requirement

AP4957AGM
14
12
I_D= -7A
V _DS = - 24 V
10
8
6
4
2
0
0
5
10
15
20
25
30
35
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1
T _A =25 ^o C
1s
Single Pulse
DC
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
30
V _DS =-5V
T _j =25 ^o C
T _j =150 ^o C
20
10
0
0
1
2
3
4
5
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
10000
1000
C _iss
C _oss
C _rss
100
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135^oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4