AP4957AGM Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Low On-Resistance, Simple Drive Requirement

40
T _A = 25 ^o C
-10V
-7.0V
-5.0V
30
-4.5V
20
V _G =-3.0V
10
0
0
1
2
3
4
5
6
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
36
I_D=-5A
T _A =25 ℃
32
28
24
20
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T _j =150 ^o C
T _j =25 ^o C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP4957AGM
40
T _A = 150 ^o C
-10V
-7.0V
-5.0V
30
-4.5V
20
V _G =-3.0V
10
0
0
1
2
3
4
5
6
7
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I_D=-7A
V _G =-10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3