AP2535GEY-HF_16 Datasheet, PDF (4/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance

AP2535GEY-HF
N-Channel
12
T _A =25 ^o C
10
8
5.0V
4.5V
3.5V
2.5V
V _G = 1.8V
6
4
2
0
0
0.4
0.8
1.2
1.6
2
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
I _D = 2A
T _A = 25 ^o C
40
30
20
0.5
1.5
2.5
3.5
4.5
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
T _j =150 ^o C
2
T _j =25 ^o C
1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
12
T _A =150 ^o C
5.0V
4.5V
10
3.5V
2.5V
8
V _G =1.8V
6
4
2
0
0
0.4
0.8
1.2
1.6
2
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =3A
V _G =4.5V
1.4
1.0
30
-30
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D =1mA
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4