AP2535GEY-HF_16 Datasheet, PDF (1/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance

Advanced Power
Electronics Corp.
AP2535GEY-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 1.8V Gate Drive
▼ Lower Gate Charge
D2
S1
D1
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
SOT-26
G2
S2
G1
Description
AP2535 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SOT-26 package is widely used for commercial surface
mount applications.
N-CH
P-CH
G1
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G2
S1
20V
32mΩ
4.6A
-20V
80mΩ
-3.1A
D2
S2
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
V_DS
Drain-Source Voltage
20
-20
V
V_GS
Gate-Source Voltage
+8
+8
V
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
4.6
-3.1
A
3.7
-2.5
A
12
-12
A
P_D@T_A=25℃
Total Power Dissipation
1.13
W
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
110
Unit
℃/W
1
201501212