AP15T25H-HF Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP15T25H-HF
12
I _D =4A
10 ^{V DS =200V}
8
6
4
2
0
0
10
20
30
40
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1ms
1
10ms
100ms
T _C =25 ^o C
1s
DC
Single Pulse
0
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
16
V _DS =5V
12
T _j =25 ^o C
8
T _j =150 ^o C
4
0
0
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
2400
2000
1600
1200
C _iss
800
400
C _oss
0
0
40
80
120
160
200
C ₂₄₀
r2s8s0
320
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
12
10
8
6
4
2
0
25
50
75
100
125
150
T _C , Case Temperature ( ^o C )
Fig 12. Drain Current v.s. Case
Temperature
4