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AP15T25H-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power
Electronics Corp.
AP15T25H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristics
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP15T25 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
BVDSS
RDS(ON)
ID
250V
320mΩ
8.7A
G
D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
250
+20
8.7
5.6
34
62.5
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data & specifications subject to change without notice
Value
2
62.5
Unit
℃/W
℃/W
1
201311181