AP1333U Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP1333U
12
10
I _D =-0.5A
V _DS =-16V
8
6
4
2
0
0
1
2
3
4
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
10
1
100us
1ms
0.1
T _A =25 ^o C
Single Pulse
10ms
100ms
DC
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off)t_f
f=1.0MHz
100
C _iss
C _oss
C _rss
10
1
3
5
7
9
11
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.01
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform