AP1333U Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP1333U
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Gate Drive
▼ Small Package Outline
▼ Fast Switching Speed
Description
D
S
SOT-323 _G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
-20V
800mΩ
-550mA
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
-20
±12
-550
-440
2.5
0.35
0.003
-55 to 150
-55 to 150
Unit
V
V
mA
mA
A
W
W/℃
℃
℃
Max.
Value
360
Unit
℃/W
Data and specifications subject to change without notice
200720041