IRF840I Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

16
T _C =25 ^o C
12
8
10V
7.0V
6.0V
4
5.0V
V _G =4.5V
0
0
4
8
12
16
20
24
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 3. Normalized BV_DSS v.s. Junction
Temperature
10
8
T _j = 150 ^o C
T _j = 25 ^o C
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
IRF840I
8
T _C =150 ^o C
6
4
2
10V
7 .0V
6 .0V
5 .0 V
V _G = 4. 5 V
0
0
4
8
12
16
20
24
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I _D =4.8A
V _G =10V
2
1
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4