IRF840I Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
▼ Ease of Paralleling
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
IRF840I
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV_DSS
R_DS(ON)
500V
0.85Ω
G
I_D
8A
S
Description
APEC MOSFET provide the power designer with the best combination
of fast switching , lower on-resistance and reasonable
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
GD _S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
±20
8
5.1
32
35
320
8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.6
65
Unit
℃/W
℃/W
201024071-1/4