AP9T18GH-HF_16 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP9T18GH-HF
120
T _C =25 ^o C
100
5.0V
4.5V
80
3.5V
60
40
2.5V
20
V _G =1.5V
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
90
80 ^{T C = 1 5 0 o C}
70
5.0V
4.5V
60
3.5V
50
40
30
2.5V
20
V _G =1.5V
10
0
0
1
2
3
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
26
1.6
I _D =9A
T _C =25 ^o C
I _D =18A
V _G =4.5V
1.4
22
1.2
18
.
1.0
14
0.8
10
0
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
8
1.5
6
T _j =150 ^o C
T _j =25 ^o C
1
4
0.5
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3