AP9T18GH-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP9T18GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Capable of 2.5V Gate Drive
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
G
S
Description
AP9T18 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance.
BV_DSS
R_DS(ON)
I_D
20V
14mΩ
38A
G _DS
TO-252(H)
Absolute Maximum Ratings@T_j=25^oC_. (unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 4.5V
Drain Current, V_GS @ 4.5V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
20
V
+16
V
38
A
24
A
140
A
31.3
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)³
Data and specifications subject to change without notice
Value
4
62.5
Units
℃/W
℃/W
1
201409014