AP9487GM-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

30
T _A = 25 ^o C
20
10
10V
7.0 V
5.0V
4.5V
V _G =3.0V
0
0
2
4
6
8
10
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
180
I_D=2A
T _A =25 ℃
150
120
90
60
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
2
T _j =150 ^o C
1
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
30
T _A = 150 ^o C
20
AP9487GM-HF
10V
7.0V
5.0V
4.5V
10
V _G =3.0V
0
0
2
4
6
8
10
12
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I_D=4A
1.7
V _G =10V
1.4
1.1
0.8
0.5
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3