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AP9487GM-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
AP9487GM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Simple Drive Requirement
â¼ Lower Gate Charge
â¼ Fast Switching Characteristic
â¼ RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
G
S
S
S
BVDSS
RDS(ON)
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial G
surface mount applications and suited for low voltage applications such as
DC/DC converters.
80V
85mΩ
4A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
80
+25
4
3.2
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
â/W
1
201107182
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