AP9475GM Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

100
T _A =25 ^o C
80
10V
6.0V
60
5.0V
4.5V
40
20
V _G =3.0V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
46
44
I_D=4A
T _A =25 ℃
42
40
38
36
34
32
3
5
7
9
11
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
5
4
3
T _j =150 ^o C
2
T _j =25 ^o C
1
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9475GM
80
70
T _A = 150 ^o C
60
50
40
10V
6.0V
5.0V
4.5V
30
20
V _G =3.0V
10
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I_D=6A
1.4
V _G =10V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.50
1.25
1.00
0.75
0.50
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature