AP9475GM Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP9475GM
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
D
D
D
D
SO-8
Description
G
S
S
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BV_DSS
R_DS(ON)
I_D
G
60V
40mΩ
6.9A
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
Storage Temperature Range
T_J
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
60
±25
6.9
5.5
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
50
Unit
℃/W
Data and specifications subject to change without notice
200517041