AP9435GK Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

30
-10V
T _A =25 ^o C
-8.0V
25
-6.0V
-5.0V
20
V _G =-4.0V
15
10
5
0
0
1
2
3
4
5
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
110
100
I _D =5.3A
T _A =25 ℃
90
80
70
60
50
40
30
3
4
5
6
7
8
9
10
11
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100.00
10.00
T _j =150 ^o C
1.00
T _j =25 ^o C
0.10
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9435GK
30
-10V
25
T _A =150 ^o C
-8.0V
-6.0V
-5.0V
20
V _G =-4.0V
15
10
5
0
0
1
2
3
4
5
6
7
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =-5.3A
1.6
V _G =10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
3
2
1
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature