 English |
|
|
|
|
|
|
|
| AP9435GK Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
| |||
| ◁ |
AP9435GK
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=-250uA
VDS=-10V, ID=-5.3A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ± 25V
ID=-5.3A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
RG=6Ω,VGS=-10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=-15V
f=1.0MHz
-30 - - V
- -0.02 - V/â
- - 50 mΩ
- - 100 mΩ
-1 - -3 V
- 10 - S
- - -1 uA
- - -25 uA
- - ±100 nA
- 9.2 16 nC
- 2.8 - nC
- 5.2 - nC
- 11 - ns
- 8 - ns
- 25 - ns
- 17 - ns
- 507 912 pF
- 222 - pF
- 158 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=-2.3A, VGS=0V
IS=-5.3A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 29 - ns
- 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 120 â/W when mounted on Min. copper pad.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese