AP9412GJ Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement

250
T _C =25 ^o C
10V
7.0 V
5.0V
200
4.5 V
150
V _G = 3.0 V
100
50
0
0.0
1.0
2.0
3.0
4.0
5.0
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
I _D =30A
T _C =25 ^o C
10
8
6
4
0
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T _j =175 ^o C
T _j =25 ^o C
20
10
0
0
0.4
0.8
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9412GH/J
100
10V
80
T _C =175 ^o C
7 .0V
5.0V
4.5 V
V _G =3.0V
60
40
20
0
0.0
2.0
4.0
6.0
8.0
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =40A
V _G =10V
1.6
1.2
0.8
0.4
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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