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AP9412GJ Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement | |||
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Advanced Power
Electronics Corp.
AP9412GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Lower Gate Charge
â¼ Simple Drive Requirement
â¼ Fast Switching Characteristic
D
G
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, lowâ¡
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9412GJ) are available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
6mΩ
73A
G
D
S
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
73
52
250
53.6
0.36
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/â
â
â
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
110
Units
â/W
â/W
Data & specifications subject to change without notice
200509072-1/4
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