AP9408AGM-HF_16 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

50
T _A =25 ^o C
10V
7.0 V
40
6.0 V
5.0 V
30
V _G = 4.0 V
20
10
0
0
1
2
3
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
14
I _D = 12.5 A
13
T _A =25 ℃
12
11
10
9
8
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T _j =150 ^o C
4
T _j =25 ^o C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9408AGM-HF
50
T _A = 150 ^o C
40
30
10V
7.0 V
6 .0 V
5.0 V
V _G = 4 .0 V
20
10
0
0
0
1
1
2
2
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D =12.5A
V _G =10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3