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AP9408AGM-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
Advanced Power
Electronics Corp.
AP9408AGM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
Description
AP9408A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
G
SS
S
BVDSS
RDS(ON)
ID
G
30V
10mΩ
12.5A
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
+20
V
12.5
A
10
A
50
A
2.5
W
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
℃/W
1
201501075