AP70L02GS Datasheet, PDF (3/8 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP70L02GS/P
250
T _C =25 ^o C
200
V _G =10V
V _G =8.0V
150
V _G =6.0V
100
V _G =5.0V
50
V _G =4.0V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
140
T _C =150 ^o C
120
100
V _G =10V
V _G =8.0V
V _G =6.0V
80
V _G =5.0V
60
40
V _G =4.0V
20
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
23
21
I _D =10A
T _c =25 ℃
19
17
15
13
11
9
7
5
2
3
4
5
6
7
8
9
10
11
V _GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.8
I _D =10A
1.6
V _G =10V
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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