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| AP70L02GS Datasheet, PDF (2/8 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP70L02GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=33A
VGS=4.5V, ID=20A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=33A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS=± 20V
ID=33A
VDS=20V
VGS=5V
VDS=15V
ID=33A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=0.45Ω
VGS=0V
VDS=25V
f=1.0MHz
25 -
-
V
- 0.037 - V/â
-
-
9 mΩ
-
- 18 mΩ
1
-
3
V
- 25 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 23
nC
-
3
nC
- 17
nC
- 8.8 - ns
- 95 - ns
- 24 - ns
- 14 - ns
- 790 - pF
- 475 - pF
- 195 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.26V
Tj=25â, IS=66A, VGS=0V
Min. Typ. Max. Units
-
- 66 A
-
- 210 A
-
- 1.26 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/6
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