AP6680SGYT-HF_14 Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

50
T _A =25 ^o C
10V
7.0V
40
6.0V
5.0V
V _G = 4.0V
30
20
10
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
16
I_D=8A
T _A =25 ℃
14
12
10
8
6
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
12
10
8
6
T _j =150 ^o C
T _j =25 ^o C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP6680SGYT-HF
50
T _A = 150 ^o C
10V
7.0V
40
6.0V
5.0V
V _G = 4.0V
30
20
10
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =12A
V _G =10V
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D =10mA
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3