AP6680SGYT-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP6680SGYT-HF
Halogen-Free Product
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
D
BV_DSS
R_DS(ON)
G
Schottky Diode I_D
30V
9mΩ
15A
S
Description
AP6680S series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK^® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
D
D
D
D
S
S
S
G
PMPAK^® 3x3
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
15
12
50
3.13
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
5
40
Unit
℃/W
℃/W
1
201206211