AP6679GI-HF Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Low Gate Charge, Single Drive Requirement

280
T _C =25 ^o C
210
-10V
-8.0V
-6.0V
140
-4.5V
70
V _G =-3.0V
0
0
1
2
3
4
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
35
I _D = -24A
T _C =25 ℃
25
150
T _C =150 ^o C
100
AP6679GI-HF
-10V
-8.0V
-6.0V
-4.5V
50
V _G =-3.0V
0
0.0
0.5
1.0
1.5
2.0
2.5
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =-30A
V _G =-10V
1.4
15
1.0
5
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
1.2
T _j =150 ^o C
T _j =25 ^o C
10
0.8
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3