AP6679GI-HF Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Low Gate Charge, Single Drive Requirement

Advanced Power
Electronics Corp.
AP6679GI-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant
Description
D
G
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
BV_DSS
R_DS(ON)
I_D
-30V
9mΩ
-48A
GDS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
-30
+25
-48
-30
300
31.3
0.25
-55 to 150
-55 to 150
Value
4
65
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200812302