AP630P Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP630P
14 _{T C =25} o _C
12
10
8
V _G =10V
V _G =8.0V
V _G =7.0V
V _G =6.0V
6
4
V _G =5.0V
2
V _G =4.0V
0
0
2
4
6
8
10
12
14
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T _C =150 ^o C
8
6
V _G =10V
V _G =8.0V
V _G =7.0V
V _G =6.0V
4
V _G =5.0V
2
V _G =4.0V
0
0
2
4
6
8
10
12
14
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
T _{j ,} Junction Temperature ( ^o C )
Fig 3. Normalized BV_DSS v.s. Junction
Temperature
3
I _D =5A
2.5 ^V G ^=10V
2
1.5
1
0.5
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature