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| AP630P Datasheet, PDF (2/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP630P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Forward Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
VDS=10V, ID=5A
VDS=200V, VGS=0V
VDS=160V, VGS=0V
VGS= ± 30V
ID= 9A
VDS=160V
VGS=10V
VDD=100V
ID= 9A
RG=10Ω,VGS=10V
RD=11Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
200 -
-
V
- 0.248 - V/â
-
- 400 mΩ
2
-
4
V
- 40 -
S
-
- 10 uA
-
- 100 uA
-
- ±100 nA
- 25 - nC
- 3.6 - nC
- 14 - nC
-
8
- ns
- 26 - ns
- 34 - ns
- 22 - ns
- 515 - pF
- 90 - pF
- 40 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25â, IS=9A, VGS=0V
Min. Typ. Max. Units
-
-
9
A
-
- 36 A
-
- 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=4.5mH , RG=25Ω , IAS=9A.
3.Pulse width <300us , duty cycle <2%.
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