AP62T03GH-J Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement

120
T _C =25 ^o C
100
80
10V
7.0V
5.0V
4.5V
60
40
V _G =3.0V
20
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
35
I _D = 15 A
T _C =25 ^o C
25
15
5
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
16
12
T _j =175 ^o C
T _j =25 ^o C
8
4
0
0
0.4
0.8
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP62T03GH/J
100
T _C = 175 ^o C
10V
7.0V
80
5.0V
4.5V
60
40
V _G =3.0V
20
0
0
1
2
3
4
5
6
7
8
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D = 20 A
V _G =10V
1.4
1.2
1.0
0.8
0.6
-50
25
100
175
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
-50
25
100
175
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3