AP62T03GH-J Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement

Advanced Power
Electronics Corp.
AP62T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
D
BV_DSS
30V
R_DS(ON)
12mΩ
G
I_D
54A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy³
I_AR
T_STG
T_J
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
TO-251(J)
Rating
30
+20
54
38
120
47
0.31
20
20
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.2
62.5
110
Units
℃/W
℃/W
℃/W
1
200903124