AP62T02GJ Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Low On-resistance

120
T _C =25 ^o C
90
10V
7.0V
5.0V
4.5V
60
30
V _G =3.0V
0
0
2
4
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
15
I _D =15A
14
T _C =25 ℃
13
12
11
10
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
20
T _j =150 ^o C
10
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP62T02GH/J
115
T _C =150 ^o C
92
69
10V
7.0V
5.0V
4.5V
46
23
V _G =3.0V
0
0.0
2.0
4.0
6.0
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I _D =30A
V _G =10V
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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